FQD3P50 |
RFQ for FQD3P50 Required Field |
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| Technical/Catalog Information | FQD3P50TF |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | P-Channel |
| Drain to Source Voltage (Vdss) | 500V |
| Current - Continuous Drain (Id) @ 25° C | 2.1A |
| Rds On (Max) @ Id, Vgs | 4.9 Ohm @ 1.05A, 10V |
| Input Capacitance (Ciss) @ Vds | 660pF @ 25V |
| Power - Max | 2.5W |
| Packaging | Tape & Reel (TR) |
| Gate Charge (Qg) @ Vgs | 23nC @ 10V |
| Package / Case | DPak, SC-63, TO-252 (2 leads+tab) |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | FQD3P50TF FQD3P50TF |
| Product | Manufacturers | Pack | D/C |
| FQD3P50 | - | TO-252(DPAK) | `06+(pb-free) |
These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for electronic lamp ballast based on complimentary half bridge.
Features |
| • -2.1A, -500V, RDS(on) = 4.9 @VGS = -10 V• Low gate charge ( typical 18 nC)• Low Crss ( typical 9.5 pF)• Fast switching• 100% avalanche tested• Improved dv/dt capability |
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